(China (Mainland))
Product Summary
The K4T1G084QF-BCF8 is a 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The K4T1G084QF-BCF8 is designed to comply with the following key DDR2 SDRAM fea-tures such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
Parametrics
K4T1G084QF-BCF8 absolute maximum ratings: (1)Voltage on VDDpin relative to VSS, VDD: -1.0 V to 2.3 V; (2)Voltage on VDDQpin relative to VSS, VDDQ: -0.5 V to 2.3 V; (3)Voltage on VDDLpin relative to VSS, VDDL: -0.5 V to 2.3 V; (4)Voltage on any pin relative to VSS, VIN, VOUT: -0.5 V to 2.3 V; (5)Storage Temperature, TSTG: -55 to +100℃.
Features
K4T1G084QF-BCF8 features: (1)JEDEC standard VDD = 1.8V ± 0.1V Power Supply; (2)VDDQ = 1.8V ± 0.1V; (3)333MHz fCKfor 667Mb/sec/pin, 400MHz fCKfor 800Mb/sec/pin; (4)8 Banks; (5)Posted CAS; (6)Programmable CASLatency: 3, 4, 5, 6; (7)Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5; (8)Write Latency(WL) = Read Latency(RL) -1; (9)Burst Length: 4 , 8(Interleave/nibble sequential); (10)Programmable Sequential / Interleave Burst Mode; (11)Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature); (12)Off-Chip Driver(OCD) Impedance Adjustment; (13)On Die Termination; (14)Special Function Support, 50ohm ODT; High Temperature Self-Refresh rate enable; (15)Average Refresh Period 7.8us at lower than TCASE 85℃, 3.9us at 85℃ < TCASE <95℃; (16)All of products are Lead-Free, Halogen-Free, and RoHS compliant.
Diagrams
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K4T1G044QM-ZCCC |
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K4T1G044QM-ZCD5 |
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