IRFPE50PBF

IRFPE50PBF, HEXFET Power MOSFET, TO-247, 800V, 5.4 Amp, International Rectifier

Rated 5 Rating 5 | reviews | Write a review

Price:: US $1.40~1.55 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $1.40~1.55

PartNumber:: IRFPE50PBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Lena's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-07-19

From Other Seller

Part Number:IRFPE50PBF
US $1.40 - 1.55
AT25256AW-10SU-2.7

US $0.65 - 1.50 / Piece
(0) Remove
MOC3063

US $0.32 - 1.50 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRFPE50PBF is a Third Generation HEXFET from International Rectifier. The IRFPE50PBF provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. The IRFPE50PBF also provides greater creepage distance between pins to meets the requirements of most safety specifications.

Parametrics

IRFPE50PBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 5.4A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 3.4A; (3)Pulsed Drain Current, IDM: 22A; (4)PD @TC = 25℃, Power Dissipation: 150W; (5)Linear Derating Factor: 1.2 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 490mJ; (8)Avalanche Current, IAR: 5.4 A; (9)Repetitive Avalanche Energy, EAR: 15mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 2 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (12)Soldering Temperature, for 10 seconds 300℃ (1.6mm from case); (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRFPE50PBF features: (1)Dynamic dv/dt Rating; (2)Repetitive avalanche rated; (3)Isolated central mounting hole; (4)Fast Switching; (5)Ease of paralleling; (6)Simple drive requirements; (7)Lead-Free.