(China (Mainland))
Product Summary
The IS61LV6416-10KLI is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the IS61LV6416-10KLI assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Parametrics
IS61LV6416-10KLI absolute maximum ratings: (1)Terminal voltage with respect to GND, VTERM: -0.5 to VCC +0.5V; (2)Storage temperature, TSTG: -65 to +150℃; (3)Power disspation, PT: 1.5W; (4)DC output current(LOW), IOUT: 20mA.
Features
IS61LV6416-10KLI features: (1)High-speed access time: 8, 10,12, and 15 ns; (2)CMOS low power operation, 250 mW (typical) operating; 250μW (typical) standby; (3)TTL compatible interface levels; (4)Single 3.3V power supply; (5)Fully static operation: no clock or refresh required; (6)Three state outputs; (7)Data control for upper and lower bytes; (8)Industrial temperature available.
Diagrams
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 IS61LV6416-10KLI |
ISSI |
SRAM 1Mb 64Kx16 10ns Async SRAM 3.3v |
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IS61LV6416-10KLI-TR |
ISSI |
SRAM 1Mb 64Kx16 10ns Async SRAM 3.3v |
Data Sheet |
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