(China (Mainland))
Product Summary
The HY62WT081ED70C is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix’s high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. The HY62WT081ED70C has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.
Parametrics
HY62WT081ED70C absolute maximum ratings: (1)Power Supply, Vcc, VIN, VOUT: -0.3 to 7.0 V; Input/Output Voltage, Vcc, VIN, VOUT: -0.3 to 4.6 V; (2)Operating Temperature, TA: 0 to 70℃; (3)Storage Temperature, TSTG: -65 to 150℃; (4)Power Dissipation, PD: 1.0 W; (5)Data Output Current, IOUT: 50mA; (6)Lead Soldering Temperature & Time, TSOLDER: 260 ·10℃·sec.
Features
HY62WT081ED70C features: (1)Fully static operation and Tri-state output; (2)TTL compatible inputs and outputs; (3)Low power consumption; (4)Battery backup(LL-part), -2.0V(min.) data retention; (5)Standard pin configuration, 28 pin 600mil PDIP; 28 pin 330mil SOP; 28 pin 8x13.4 mm TSOP-I(Standard).
Diagrams
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